PREPARATION AND PHOTOELECTRIC PROPERTY OF Al DOPED ZnO THIN FILMS BY DUAL TARGET REACTIVE MAGNETRON SPUTTERING

Al-doped ZAO thin films were deposited on Si（100） and glass substrates by dual target reactive magnetron sputtering.The characters and the effect of Al doping on crystal structure and photoelectric properties of ZnO thin films were investigated by X-ray diffraction（XRD）,atomic force microscope（AFM）,fluorescence photometer,ultraviolet spectrophotometer and four-point probe sheet resistance measurement.The results show that the structure of Al-doped ZAO thin film is similar to that of ZnO thin film and ZAO thin film grow along（002） crystal plane.ZAO thin film shows a single violet emitting peak on the photoluminescence spectra.The average optical transmittance of all films is higher than 80% in the visible range.The electrical resistivity of ZAO thin film is 8.85×10^-4W·cm when the sputtering powers are 100 W and 20W for Zn and Al targets respectively.It indicates the ZAO thin films prepared by dual target reactive magnetron sputtering have excellent photoelectric properties.