STUDY ON SIO₂ FILM DEPOSITION AT LOW TEMPERATURES

The preparation of SiO₂ film by plasma enhanced chemical vapor deposition（ PECVD） was invertigated. The effect of deposition parameters on the properties of the film was analyzed. The stress of the film by adjusing the RF power was optimized,Near-zero stress SiO₂ film was prepared at 150 ℃. The deposition rate is around 40 nm / min with thickness uniformity better than 3% and refractive index in the range of 1.46±0.003. The film had good adhesion and etching resistance. Due to its low temperature and excellent film properties,the film can be applies in flexible electronics as insulation or dielectric layers.