EXPERIMENTAL RESEARCH ON SINGLE EVENT EFFECTS OF CMOS APS IMAGE SENSOR

The single event effects of 512×512 CMOS active pixel image sensors fabricated by Key Laboratory of Infrared-materials and Devices has been study experimentally by using pulsed laser beams. The single event upsets (SEU) and single event latchup (SEL) has been observed when CMOS active pixel image sensors exposure to pulsed laser beam. The validity of measures on chip against to SEL has been verified. At the cases of shift register area where exposure to pulsed laser beam, the SEU and SEL has been observed simultaneously. The same phenomenon has been also observed in the other areas on chip. The characteristic of single event effects on CMOS active pixel sensor has been analyzed. The critical energy of pulsed laser beam inducing SEU and SEL has been gained and the current value of SEL has been measured experimentally.