THE PROPERTIES OF GRAPHENE FILMS UNDER DIFFERENT PROCESS PARAMETERS BY MPCVD

The graphene films are grown on a nickel substrate with MPCVD devices， during which hydrogen and methane are used as the main gas sources， nitrogen and argon are taken as auxiliary gas sources. The prepared samples under different conditions are represented by the Raman spectrometer. The graphene defect content is obtained through analyzing the D peak and D′ peak in the Raman spectrum， and the layer number is got through intensity and FWHM of 2D. The results showed that the low dissociation rate of nitrogen plasma increases the film defects and is not conducive to forming films； a higher dissociation rate of argon with a moderate amount decreases the content of defects and improves the quality of films； a relatively lower power accelerates the deposition of graphite， and a relatively higher power increases the formation of the carbon-carbon bond in sp³ hybrid.