THE PASSIVATION PROPERTY OF AlO<sub>x</sub>THIN FILM DEPOSITED BY LMW-PECVD

ZHANG Jian; BA De-chun; ZHANG Zhen-hou

doi:10.3969/j.issn.1006-7086.2015.06.002

ZHANG Jian, BA De-chun, ZHANG Zhen-hou. THE PASSIVATION PROPERTY OF AlOxTHIN FILM DEPOSITED BY LMW-PECVD[J]. VACUUM AND CRYOGENICS, 2015, 21(6): 315-319. DOI: 10.3969/j.issn.1006-7086.2015.06.002

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ZHANG Jian, BA De-chun, ZHANG Zhen-hou. THE PASSIVATION PROPERTY OF AlOxTHIN FILM DEPOSITED BY LMW-PECVD[J]. VACUUM AND CRYOGENICS, 2015, 21(6): 315-319. DOI: 10.3969/j.issn.1006-7086.2015.06.002

Citation:

ZHANG Jian, BA De-chun, ZHANG Zhen-hou. THE PASSIVATION PROPERTY OF AlOxTHIN FILM DEPOSITED BY LMW-PECVD[J]. VACUUM AND CRYOGENICS, 2015, 21(6): 315-319. DOI: 10.3969/j.issn.1006-7086.2015.06.002

THE PASSIVATION PROPERTY OF AlO_xTHIN FILM DEPOSITED BY LMW-PECVD

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AlO_xthin film have been synthesized on p-Si substrates via linear micro wave plasma enhanced chemical vapor deposited system.The obtained samples were characterized by SEM、Elliptical polarization instrument and Lifetime measuring device.The experimental results show that thickness and refractivity of AlO_xthin film has influenced on passivation property in p-Si.The thickness from 20 nm to 25 nm and refractivity from 1.6 to 1.65 of AlOx thin film has perfect passivation property.The impact of Annealing on AlO_xthin film was complex，but the best annealing temperature has arised from 350℃ to 400℃.

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THE PASSIVATION PROPERTY OF AlOxTHIN FILM DEPOSITED BY LMW-PECVD

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THE PASSIVATION PROPERTY OF AlO_xTHIN FILM DEPOSITED BY LMW-PECVD