LIU Fan, WENG Jun, WANG Jian-hua, et al. THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS[J]. VACUUM AND CRYOGENICS, 2016, 22(3): 132-137. DOI: 10.3969/j.issn.1006-7086.2016.03.002
Citation: LIU Fan, WENG Jun, WANG Jian-hua, et al. THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS[J]. VACUUM AND CRYOGENICS, 2016, 22(3): 132-137. DOI: 10.3969/j.issn.1006-7086.2016.03.002

THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS

  • Microwave Plasma CVD (MPCVD) is one of the promising method for high growth rate,high quality, and large area diamond films deposition,and the research of the MPCVD device have received extensive attention of the researchers and industry. The properties and different preparation methods of diamond films were briefly summarized,the growth mechanism of CVD diamond films was discussed at the same time in the paper. The structure characteristics and working principle of various kinds of MPCVD device were emphatically elaborated,meanwhile,the advantages and disadvantages of all this kinds of devices were analyzed. The results show that:development of MPCVD device which has the high quality factor of resonance cavity and the uniform microwave plasma is the main problem of diamond films in industrial application.
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