EFFECT OF CARBON OXYGEN RATIO ON THE GROWTH OF DIAMOND FILMS

Diamond films were deposited with H₂/CH₄/CO₂ gas mixtures as source using microwave plasma chemical vapor deposition method with different carbon/oxygen ratio, which is aimed at exploring the effect of carbon oxygen ratio on the growth of diamond. The surface morphology, grain orientation and crystallinity of diamond films were systematically characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. The results show that with the decrease of C/O ratio, diamond films surface morphology changed from the original(100) plane to pyramid-shaped with(111) plane, film quality improved and internal stress is reduced.