JIN Zhan-lei, SUN Qi-yang, DAI Li-qun. SIMULATION OF HIGH-POWER CRYOGENIC DRIVEN CIRCUIT[J]. VACUUM AND CRYOGENICS, 2016, 22(5): 286-290. DOI: 10.3969/j.issn.1006-7086.2016.05.009
Citation: JIN Zhan-lei, SUN Qi-yang, DAI Li-qun. SIMULATION OF HIGH-POWER CRYOGENIC DRIVEN CIRCUIT[J]. VACUUM AND CRYOGENICS, 2016, 22(5): 286-290. DOI: 10.3969/j.issn.1006-7086.2016.05.009

SIMULATION OF HIGH-POWER CRYOGENIC DRIVEN CIRCUIT

  • Research is done to high-power cryogenic driven circuit.Simulation is done to power output filter circuit,H-bridge circuit and power storage filter circuit.Current of power storage filter circuit is major simulated to different load. Results indicate that load difference has little influence on power output filter capacitor current,and has much bigger influence to current of power output filter inductance,H-bridge MOSFET,power storage filter inductance and capacitor.Then,two optimal design methods are given on power storage filter circuit.The results are expected to give reference for reducing power consumption and miniaturizing controller.
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