RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM

DU Rong-chi; WANG Guang-cai; ZHANG Xiao-dan; ZHANG Ying-chun; ZHAO Ying

doi:10.3969/j.issn.1006-7086.2017.03.003

DU Rong-chi, WANG Guang-cai, ZHANG Xiao-dan, et al. RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM[J]. VACUUM AND CRYOGENICS, 2017, 23(3): 136-141. DOI: 10.3969/j.issn.1006-7086.2017.03.003

Citation:

DU Rong-chi, WANG Guang-cai, ZHANG Xiao-dan, et al. RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM[J]. VACUUM AND CRYOGENICS, 2017, 23(3): 136-141. DOI: 10.3969/j.issn.1006-7086.2017.03.003

Citation:

DU Rong-chi, WANG Guang-cai, ZHANG Xiao-dan, et al. RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM[J]. VACUUM AND CRYOGENICS, 2017, 23(3): 136-141. DOI: 10.3969/j.issn.1006-7086.2017.03.003

RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM

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Reactive plasma deposition system has the characteristics of low ion bombardment energy and low substrate temperature when the film is deposited. It can be applied to the deposition of transparent conductive materials， and this technology is conducive to high conversion efficiency of solar cells. In this paper， the reaction plasma deposition system was studied with the RPD equipment of model FLD08. Tungsten doped indium oxide（IWO）thin films were deposited， and good results were obtained.

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RESEARCH OF REACTIVE PLASMA DEPOSITION SYSTEM

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