ZHANG Fuqiang, HAN JinHua, SHEN DongJun, et al. The Comparison of Different Calculating Method Based on Microelectronic Devices Heavy Ion to Proton Single Event Effect Cross Section[J]. VACUUM AND CRYOGENICS, 2019, 25(6): 387-391. DOI: 10.3969/j.issn.1006-7086.2019.06.006
Citation: ZHANG Fuqiang, HAN JinHua, SHEN DongJun, et al. The Comparison of Different Calculating Method Based on Microelectronic Devices Heavy Ion to Proton Single Event Effect Cross Section[J]. VACUUM AND CRYOGENICS, 2019, 25(6): 387-391. DOI: 10.3969/j.issn.1006-7086.2019.06.006

The Comparison of Different Calculating Method Based on Microelectronic Devices Heavy Ion to Proton Single Event Effect Cross Section

  • In view of the 0.25 μm CMOS process SRAM's heavy ion and proton single event effect(SEU)experiment data,three different common prediction method based on heavy ion to proton single event effect data are analyzed.Meanwhile,the prediction result is compared with the experiment.Also we calculated the on orbit SEU error rate of different data on the Space Radiation software.At last,the accuracy and the applicability of those different method were been concluded.
  • loading

Catalog

    Turn off MathJax
    Article Contents

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return