Effect of Rapid Quenching Speed and Ce Addition on the Sorption Properties of Zr-Ti-V Getters

For MEMS chip devices,especially infrared thermal radiation sensors for individual soldiers,parameters such as the absorption behavior,dynamics,and thermodynamics of getter materials are very important for the stability,safety,sensitivity and life of the MEMS chip.Zr_0.9Ti_0.1V ₂ was used as the matrix alloy,and the rapid solidification method and rare-earth element Ce alloying method were used to study the effects of different rapid quenching speeds and the addition of Ce element on the microstructure and phase structure of the alloy ribbons.The vacuum packaging process conditions of the MEMS device and the environment of the cavity after the vacuum packaging were simulated.The parameters such as the gettering performance of the Zr_0.9-x Ti_0.1V ₂Ce_x(x=0,0.025,0.05,0.075,0.1)ribbons were tested.The results show that higher cooling rate and proper amount of Ce can effectively refine the grains and reduce the formation of the oxide phase Zr₃V ₃O in the Zr_0.9-x Ti_0.1V ₂Ce_x ribbons,and improve the oxidation resistance of the getter material during the preparation process.When the content of Ce is 0.05,the alloy ribbons have the best hydrogen absorption performance,which can make the vacuum of the working environment of the simulated MEMS device reach 1×10^-3 Pa or more.The addition of Ce makes the platform of the PCT(pressure-component-temperature)curve more flat and broadened,the stability of the dissolved hydrogen is improved,and the hydrogen absorption is increased.The Zr_0.85Ti_0.1V ₂Ce_0.05 ribbons have large enthalpy change value,strong binding ability with H,and they are easier to absorb hydrogen.According to the Van’t Hoff relationship,the platform at room temperature of 10^-14~10^-13 Pa is introduced to improve the stability of the device.Zr_0.85Ti_0.1V ₂Ce_0.05 ribbons with excellent properties can meet the application of MEMS devices.