Research Progress in Preparation of Cobalt Metal Thin Films

In recent years,due to the excellent physical and chemical properties of cobalt thin films,such as low resistivity,high magnetic anisotropy and high catalytic activity,it has attracted extensive attention.In the field of integrated circuits,based on the excellent low resistivity characteristics of cobalt,cobalt can replace copper as a new generation of semiconductor wire material.As an interconnect wire in 10 nm,7 nm,or even 5 nm,3 nm chip manufacturing process,it can improve the conductivity,reduce power consumption and greatly reduce the chip volume,which makes the chip more efficient.At present,there are many researches on the preparation of cobalt thin films.This paper mainly introduces the research status of cobalt thin films deposited by chemical vapor deposition,thermal atomic layer deposition and plasma assisted atomic layer deposition,discusses the advantages and disadvantages of various preparation methods,summarizes the precursors used in preparation,and prospects the development trend.