Progress in the Preparation of Transition Metal Films by Plasma Enhanced Atomic Layer Deposition

Atomic-level processing corresponds to the most advanced electronic devices used for computing and data storage,and emerging technologies related to the internet of things,artificial intelligence,and quantum computing are becoming more and more important.Plasma enhanced atomic layer deposition(PEALD)is an atomic level surface deposition technology.Due to its high reactivity and low deposition temperature,PEALD has attracted more and more attention.This paper introduces the basic principle of PEALD technology and its advantages over other thin film deposition methods.Then it introduces the characteristics of PEALD technology of transition metals Ti,Co,Ni,Cu,Ru,Pd,Ag,Ta,Ir and Pt as well as the development status in the field of microelectronics.Finally,the summary and prospect are given.