Preparation and Electrical Properties of ZrRu Thin Films Prepared by Magnetron Co-sputtering

The selection of diffusion barrier materials is one of the key points of copper interconnection technology.Researches show that binary alloy composed of two refractory metals has become a kind of potential barrier layer material due to its high reaction temperature with Si,low resistivity and high crystallization temperature.In this paper,ZrRu thin films were deposited on p-type Si(100)substrates by magnetron co-sputtering.The chemical properties,phase structure,morphology and electrical properties of ZrRu alloy films were characterized by X-ray photoelectron spectroscopy,X-ray diffraction,scanning electron microscopy and four-point probe method.The results show that with the increasing Ru sput-tering power,the deposition rate of the films increases from 7.74 nm·min^-1to 17.99 nm·min^-1.When Ru sputtering power is lower than 35 W,the films are amorphous or microcrystalline state;when Ru sputtering power is 45 W,the microstruc-ture of the films is altered gradually from amorphous to columnar crystalline structure with uniform size.It demonstrates that the microstructure of ZrRu films can be controlled by incorporating Ru atoms.The resistivity of the films decreases from 192.2 μΩ·cm to 53.5 μΩ·cm with the increasing Ru sputtering power,indicating good electrical properties.