PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY

Yuan Zeliang. PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY[J]. VACUUM AND CRYOGENICS, 1995, 1(2): 91-100.

Citation:

Yuan Zeliang. PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY[J]. VACUUM AND CRYOGENICS, 1995, 1(2): 91-100.

Citation:

Yuan Zeliang. PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY[J]. VACUUM AND CRYOGENICS, 1995, 1(2): 91-100.

Abstract

The development of microwave GaAs MESFET reliability is described.Some factors influencing on its reliability are emphasized such as interdiffusion of gate Schottky contact and source/drain Ohmic contact and surface effect.

FullText(HTML)

Turn off MathJax

Article Contents

Export File