XPS AND AFM CHARACTERIZATION OF INDIUM TIN OXIDE FILM BY MAGNETRON SPUTTERING CERAMIC TARGET

Teh microsuucture and photoelectric performance of Indium Tin Oxide film prepared by magnetron sputtering ceramic target have been studied. The testing results of X ray photoelectron spectroscopy, atomic force microscopy and spectrophotometer have been presented. They showed that the microstructure of Indium Tin Oxide film was characterized SnO₂ and In ₂O₃ phases, with content of 5.8% and 85.0%, respectively. The film surface was compact and characterized many equal crystal ball particulate with average diameter of 50 nm. The film had a transmittance over 80.0% to completely visible light and a rather high reflectivity （over 70% at 2 500 nm） to near infrared rays. Resistivity of the film is 2.7×10^-4 Ω·cm. Forbidden bandwidth of over 3.35 eV.