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VACUUM AND CRYOGENICS > 1997 > 3(2): 74-76.

LU Qingao, WU Qinchong. WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP[J]. VACUUM AND CRYOGENICS, 1997, 3(2): 74-76.

Citation:

LU Qingao, WU Qinchong. WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP[J]. VACUUM AND CRYOGENICS, 1997, 3(2): 74-76.

LU Qingao, WU Qinchong. WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP[J]. VACUUM AND CRYOGENICS, 1997, 3(2): 74-76.

Citation:

LU Qingao, WU Qinchong. WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP[J]. VACUUM AND CRYOGENICS, 1997, 3(2): 74-76.

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WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP

Institute of Plasma Physics, Academia Sinica, Hefei 230031

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Received Date: January 18, 1997

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Abstract

Microwave Plasma Chemical Vapor Deposition （MPCVD） is an important method for diamond film preparation.The microwave modes such as TE 10,TEM and TM ₀₁ in the microwave mode converter of the MPCVD set ups were measured in experiments.The initial phases of TEM and TM ₀₁ modes were given respectively.The coupling between microwave and plasma was described.5 kW antenna coupled MPCVD set up was developed in China for the first time.
- Microwave mode,
- Plasma,
- CVD set up

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