PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS

The magnetron sputtering method was used for preparation of the W doped VO₂ thin films. VO₂ thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate. Thin films electric property have been studied. The results indicate that the phase transition temperature of V_1-XW_XO₂ depressed compared with VO₂ . Its IR transmittance decreased too. The micro structures and compositions of the films are studied by XRD and XPS.