THE DESIGN ON RECTANGULAR PLANAR MAGNETRON-SPUTTERING TARGET WITH THE HIGH INTENSITY OF MAGNETIC FIELD

The probability of low voltage magnetron sputtering achieved by high intensity of magnetic field has been studied. Several factors confining the upper limit of the intensity B of magnetic field parallel to target surface in rectangular planar magnetron sputtering target have been studied by theory analysis, practice design and experiment. The rectangular planar magnetron sputtering target with B of 0.09 T has been designed. The results showed that the increase of the B educed greatly the touching off and keeping discharge voltage during magnetron sputtering coating, which give other approach to low voltage magnetron sputtering.