PREPARATION OF ITO FILM FOR ELECTROCHROMIC DEVICE

WANG Jie-bing, HE Yan-chun, XU Min, et al. PREPARATION OF ITO FILM FOR ELECTROCHROMIC DEVICE[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 32-36,40.

Citation:

WANG Jie-bing, HE Yan-chun, XU Min, et al. PREPARATION OF ITO FILM FOR ELECTROCHROMIC DEVICE[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 32-36,40.

Citation:

WANG Jie-bing, HE Yan-chun, XU Min, et al. PREPARATION OF ITO FILM FOR ELECTROCHROMIC DEVICE[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 32-36,40.

Abstract

This paper study the preparation technology of ITO thin film for electrochromic divece.Some factors（pressure、rate of Ar and O2、anneal temperature） of process are analyzed.Resistance of the ITO films is 100～120 Ω/cm,absorptivity less than 5%.

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