Yuan Zeliang, Fan Chuizhen. Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout[J]. VACUUM AND CRYOGENICS, 1994, 13(3): 128-132.
Citation:
Yuan Zeliang, Fan Chuizhen. Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout[J]. VACUUM AND CRYOGENICS, 1994, 13(3): 128-132.
Yuan Zeliang, Fan Chuizhen. Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout[J]. VACUUM AND CRYOGENICS, 1994, 13(3): 128-132.
Citation:
Yuan Zeliang, Fan Chuizhen. Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout[J]. VACUUM AND CRYOGENICS, 1994, 13(3): 128-132.
Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout
Microwave GaAs power FET chips fabricaled by us which appear D.C. burnout during the testing arc investigated by means of scann-ing electron microscopy（SEM）and Auger microprobe（SAM）,the physics procedure and mechanism of D.C. burnout are analyzed.
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