PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaO<sub>x</sub> THIN FILMS

HE Yan-chun; QIU Jia-wen; XU Min; WANG Jie-bing; WU Chun-hua

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VACUUM AND CRYOGENICS > 2008 > 14(1): 6-10.

HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaO_x THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.

Citation:

HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaO_x THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.

Citation:

HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaO_x THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.

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PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaO_x THIN FILMS

Lanzhou Institute of Physics, National key Laboratory of surface engineering, Lanzhou 730000, China

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Received Date: January 17, 2008

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Abstract

Abstract

In this paper,the prepatation technology of the Ta₂O₅ films by DC reactive magnetron sputtering was studied.The ionic conductivity was measured by a new method based Arnoldussen method,the result showed the Ta₂O₅ films have a good ionic conductive performance.
- TaO_x,
- thin films,
- ionic conductor,
- magnetron sputtering,
- electrochromic