HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.
Citation:
HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.
HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.
Citation:
HE Yan-chun, QIU Jia-wen, XU Min, et al. PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS[J]. VACUUM AND CRYOGENICS, 2008, 14(1): 6-10.
PREPARATION AND PROPERTIES OF ION STORAGE LAYER OF TaOx THIN FILMS
In this paper,the prepatation technology of the Ta2O5 films by DC reactive magnetron sputtering was studied.The ionic conductivity was measured by a new method based Arnoldussen method,the result showed the Ta2O5 films have a good ionic conductive performance.
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