CHARACTERISTICS OF ALUMINUM OXIDE FILMS ANODIZED IN A HF OXYGEN PLASMA

Vacuum evaporated Al films were anodized in a high frcquency （HF） glow discharge oxygen plasma. The resultant surface oxide layers were characterized by XRD,XPS,AES and four-electrode technique.The results show that the surface oxide layer in Al oxide film is γ-Al₂O₃ with a lattice constant of a_o=0.791 24 nm. Atroom temperature, the surface resistance of the oxide film is 6.56～0.11 Ω/□ or 1 256.4～4.81 Ω/□;and at lower temperature （77 ～273 K）,the surface resistance is 0.18～0.38 Ω/□.