THE DEPOSITION OF ANATASE TiO₂ THIN FILMS BY DC REACTIVE MAGNETRON SPUTTERING

TiO₂ thin films were grown on glass substrate by DC reactive magnetron sputtering at 350 ℃. The experiments were designed by orthogonalizing method for many factors: the sputtering pressure, the ratio between oxygen and argon, sputtering current and sputtering time. The effect of each factor on the structure of TiO₂ thin films was investigated. Judging from the XRD spectra and Raman spectra, the optional process conditions under which Anatase TiO₂ Thin films were deposited as fellows: the sputtering pressure is 0.3 Pa, the ratio between oxygen and argon is 1∶3, sputtering current is 0.7A, the sputtering time is 40 minutes, the annealing temperature is 650 ℃.