PREPARATION OF Al<sub>2</sub>O<sub>3</sub> POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE

LIU Jian, YANG Dong. PREPARATION OF Al2O3 POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE[J]. VACUUM AND CRYOGENICS, 2001, 7(4): 204-206,240.

Citation:

LIU Jian, YANG Dong. PREPARATION OF Al2O3 POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE[J]. VACUUM AND CRYOGENICS, 2001, 7(4): 204-206,240.

Citation:

LIU Jian, YANG Dong. PREPARATION OF Al2O3 POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE[J]. VACUUM AND CRYOGENICS, 2001, 7(4): 204-206,240.

PREPARATION OF Al₂O₃ POLYCRYSTALINE FILMS AND STUDY OF SPUTTERING TECHNIQUE

Abstract

High energy Ar⁺ ion beam sputtering aluminum target,the amorphous films deposited on SiO₂ substrates are a mixture of Al and Al₂O₃.Annealing at between 800℃ and 1000℃,the amorphous films will oxidize,cystalize and finally turn into γ-Al₂O₃ and a-Al₂O₃.The sputtering technique has also been investigated.

FullText(HTML)

Turn off MathJax

Article Contents