FABRICATION OF TRIGANOL Se NANOWIRES AND ITS FIELD EFFECT TRANSISTOR PROPERTIES

We prepared triganol Se nanowires （NWs） by a chemical solution process. Transmission Electron Microscopy （TEM）, High Resolution TEM （HRTEM） and X-Ray Diffraction （XRD） were used to characterize the morphology and structural characterization of the Se NWs. The results show that the Se NWs are single crystalline and grow along the c-axis, the direction parallel to the helical chains of Se atoms. Single Se NW field effect transistor （FET） devices were prepared through photolithographic patterning. Our research indicates that the single Se NW device is p-type semiconductors. This finding on the Se NW FETs have broad implications and provide very useful fundamental information necessary for future applications in the fabrication of high quality NW FETs and other electronic devices.