Guan Kunzhi, Li Yunqi, Xu Chenghai. A DISCUSSION ON PARAMETERS OF RECTANGULAR PLANE MAGNETRON SPUTTERING APPARATUS[J]. VACUUM AND CRYOGENICS, 1996, 2(2): 63-67.
Citation: Guan Kunzhi, Li Yunqi, Xu Chenghai. A DISCUSSION ON PARAMETERS OF RECTANGULAR PLANE MAGNETRON SPUTTERING APPARATUS[J]. VACUUM AND CRYOGENICS, 1996, 2(2): 63-67.

A DISCUSSION ON PARAMETERS OF RECTANGULAR PLANE MAGNETRON SPUTTERING APPARATUS

  • The parameters of the rectangular plane magnetron sputtering apparatuses, such asstrength of magnetic field and electric field, gas pressure, target materials, temperature and movingspeed of substrates, geometry construction and so on, are affected each other and affect at last the design of the rectangular plane magnetron sputtering apparatus’ The following subjects are discussed inthis paper: disign and culculation of magnetic induction; relationship between electric voltage, electriccurrent and gas pressure, temperature and moving speed of substrates, uniformity of film thickness.
  • loading

Catalog

    Turn off MathJax
    Article Contents

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return