高功率MPCVD谐振腔体的优化设计和数值模拟

Optimization Design and Numerical Simulation of High-power MPCVD Resonance Cavity

  • 摘要: 微波等离子体化学气相沉积(MPCVD)装置能够非常高效地产出高质量的金刚石薄膜,由于波长和腔体结构的限制,传统2.45 GHz MPCVD装置所沉积出的薄膜面积直径通常维持在50~70 mm之间。以增大金刚石膜沉积面积为目标,通过对微波电场进行仿真分析,优化设计腔体尺寸,并对电子密度和温度的分布特性进行数值模拟,以保证等离子体能够均匀分布于沉积片上,将沉积直径扩增至90 mm。模拟结果表明,当腔内微波源功率为6000 W,压力为14.7 kPa时,沉积片上可以产生电子密度和温度分别为1.76×1018 m−3和4.7×104 K的高密度且均匀的等离子体。

     

    Abstract: The Microwave Plasma Chemical Vapor Deposition(MPCVD) system has emerged as a highly efficient method for producing high-quality diamond films, which have a wide range of applications in electronics, optics, and cutting tools. However, traditional MPCVD systems operating at a frequency of 2.45 GHz face inherent limitations regarding the diameter of the film area that can be deposited. Typically, this diameter ranges from 50 to 70 mm, constraining the potential for large-area applications. To address this challenge, recent efforts have focused on optimizing the design of the cavity dimensions within the MPCVD system. By simulating and analyzing the microwave electric field, researchers have been able to identify configurations that enhance the deposition area for diamond films. These optimizations are critical for increasing the uniformity and quality of the deposited films, allowing for more versatile industrial applications. In addition to cavity design improvements, numerical simulations have been conducted to investigate the distribution characteristics of electron density and temperature within the plasma. Achieving a uniform plasma distribution on the deposition substrate is vital for enhancing the overall film quality and expanding the deposition diameter. Through these simulations, researchers have successfully demonstrated that the deposition diameter can be increased to 90 mm, significantly surpassing the limitations of traditional systems. The simulation results reveal that when the microwave source power is set to 6 000 W and the pressure within the cavity is maintained at 14.7 kPa, a high-density and uniform plasma is generated on the deposition substrate. Specifically, the electron density reaches an impressive value of 1.76×1018 m−3, while the temperature of the plasma is approximately 4.7×104 K. These findings indicate that the optimized MPCVD system can produce high-quality diamond films over a larger area, paving the way for advancements in various technological fields. The enhancements achieved through careful simulation and design highlight the potential for further developments in plasma deposition techniques.

     

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