温度对MEMS电容薄膜真空计测量性能的影响研究

Temperature Influence on the Measurement Performance of MEMS Capacitance Diaphragm Gauge

  • 摘要: MEMS电容薄膜真空计实现了传统机械式电容薄膜真空计的小型化,在微电子、深空探测等领域有广泛的应用前景。作为一种准确度高、稳定性好、测量结果与气体成分无关的中低真空全压力测量仪器,MEMS电容薄膜真空计测量结果与环境温度密切相关。为保证其测量的准确性,须考虑温度漂移特性并进行修正。论文分析了温度变化对MEMS电容薄膜真空计测量性能影响的机理。基于所研制的MEMS电容薄膜真空计,在0.1 Pa至101 kPa(大气压)的全量程测量范围内,开展−20~50 ℃温度范围内真空计压力-电容特性研究。结果表明,MEMS电容薄膜真空计的测量结果受环境温度的影响,其输出电容随着温度的升高而增大。在真空计测量零点,输出电容随温度的升高而增大,且与温度呈现线性关系。在−20 ℃至50 ℃的温度范围内,MEMS电容薄膜真空计在相同压力点下的输出电容也随温度的升高而增大,温度相差10 ℃时,真空计输出电容的相对偏差最大为3.1%。此外,测试结果也表明,温度造成的测量结果偏差大小与待测压力的大小相关。本研究将为MEMS电容薄膜真空计的温度补偿技术提供有力支撑。

     

    Abstract: The MEMS capacitance diaphragm gauge (CDG), a miniaturized alternative to traditional mechanical vacuum gauges, offers key advantages for applications in microelectronics, aerospace, and deep space exploration, including compact size, high precision, and gas-independent operation in medium-to-low vacuum environments. However, its performance is highly susceptible to environmental temperature variations. A thorough understanding of its temperature characteristics is therefore critical for implementing effective temperature drift compensation and enhancing measurement accuracy. This study investigates the temperature-dependent behavior of a MEMS CDG developed by the authors. Based on the device's structure and operating principles, two primary mechanisms are identified as sources of temperature-induced measurement error: (1) thermal expansion mismatch between the silicon diaphragm and the glass encapsulation, and (2) temperature-driven changes in the sealed cavity's reference pressure. Theoretical analyses reveal that the mismatch in coefficients of thermal expansion (CTE) between silicon (used for the diaphragm) and glass (used for bonding and encapsulation) causes structural bending as temperature rises. This bending reduces the electrode gap, thereby increasing capacitance. Concurrently, the reference pressure in the sealed cavity increases with temperature, causing slight diaphragm deflection toward the fixed electrode and further modifying capacitance. Experimental evaluation over a temperature range of −20 ℃ to 50 ℃ and a pressure range from 0.1 Pa to atmospheric pressure confirms these effects. At zero pressure, output capacitance increases linearly with temperature, while across the full temperature range, the capacitance-temperature response exhibits nonlinear behavior. A maximum relative deviation of 3.1% in output capacitance was observed for a 10 ℃ temperature change. Notably, the temperature-induced error is pressure-dependent, with deviations amplifying or diminishing based on the measured pressure. These findings establish a foundation for implementing robust temperature compensation in MEMS CDGs.

     

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