深层放电脉冲特征模拟及对MOS器件损伤试验

Experimental on Pulse Simulation of Deep Charging Effect and Damage to MOSFET

  • 摘要: 深层带电效应已经成为威胁卫星在轨安全的主要空间环境效应因素。为准确模拟深层放电脉冲特征,实现星用器件抗深层放电的性能评价,提出了采用RLC优化电路与商用静电放电发生器相结合的方法。建立了一种能够定量研究深层放电对电子器件损伤效应的测试装置,并对MOS器件开展了试验测试,分析了其损伤机制。研究结果表明,经RLC电路优化后的脉冲波形、电流幅值、持续时间等参数均符合深层放电特征,实现了深层放电脉冲的有效模拟。当脉冲电流幅值增加至9 A时,放电脉冲导致MOS器件的SiO2绝缘层击穿,使MOS器件发生不可恢复的“硬损伤”现象;同时研究发现,放电电流低于损伤阈值时放电脉冲同样会造成绝缘层损伤,且该损伤可通过多次累积最终导致绝缘层彻底击穿。

     

    Abstract: The deep charge effect has emerged as a primary space environmental factor posing significant threats to the orbital safety of satellites. To accurately simulate the characteristics of deep discharge pulses and evaluate the resistance of spacecraft components against the deep discharge, researchers have adopted an RLC circuit to optimize the parameters of discharge pulses generated by commercial ESD generators, including waveform, current amplitude, and duration. This approach has enabled the simulation of pulses exhibiting oscillatory attenuation, microsecond-scale durations, and small current amplitudes. By ensuring that the simulated pulses align with the characteristics of deep discharge while offering the benefits of excellent reproducibility and adjustable discharge parameters, a simulation testing methodology tailored for quantitative investigation of deep discharge-induced damage to electronic devices has been established. MOS devices have been tested using this methodology, and their damage mechanisms have been analyzed. The results indicate that when a simulated pulse is injected into the gate of a MOS device, an interference signal is generated. When the pulse current amplitude is low, the device can swiftly recover its signal output. However, when the current increases to 9 A, the simulated pulse triggers a breakdown of the internal insulation layer, leading to irreversible “hard damage” to the MOS device. Furthermore, research has shown that even when the discharge current falls below the damage threshold, the simulated pulse can still cause insulation damage, resulting in an increased leakage current between the drain and source of the MOS device. This damage can accumulate over multiple discharge instances until the insulation layer is completely compromised, ultimately causing device failure. This research holds significant guidance and application value for evaluating satellite deep electrification effects and designing protective measures. It provides a comprehensive understanding of the damage mechanisms caused by deep discharge pulses and offers insights into the development of more resilient spacecraft components capable of withstanding such extreme space environmental conditions.

     

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