Abstract: Graphene with high transmittance and good electrical conductivity is considered to be an ideal transparent conductive material. However, due to the polycrystalline property and low intrinsic carrier concentration of graphene, the sheet resistance of graphene transparent conductive film (G-TCO) is on the high side, which can't meet the requirements of practical application. Therefore, it is very important for the application of G-TCO to improve the conductivity of graphene. Improving carrier concentration of graphene by doping is one of the important ways to improve the electrical conductivity of GTCO. G-TCO on Cu foils by chemical vapor deposition (CVD) is prepared, treated by nitric acid. The effect of doping on the carrier concentration and conductivity of G-TCO is studied. Experimental results confirmed that P-type doping was introduced in G-TCO after nitric acid treatment, which made the carrier concentration increase 2. 5 times and sheet resistance drop from 530 Ω to 205 Ω and significantly improved the electrical conductivity of G-TCO. The high transmittance property of G-TCO was slightly reduced after nitric acid treatment.