邵希吉, 董长昆, 李得天, 等. 碳纳米管非金属掺杂对结构和性能影响的研究[J]. 真空与低温, 2014, 20(4): 193-200. DOI: 10.3969/j.issn.1006-7086.2014.04.002
引用本文: 邵希吉, 董长昆, 李得天, 等. 碳纳米管非金属掺杂对结构和性能影响的研究[J]. 真空与低温, 2014, 20(4): 193-200. DOI: 10.3969/j.issn.1006-7086.2014.04.002
SHAO Xi-ji, DONG Chang-kun, LI De-tian, et al. STUDY ON THE EFFECT OF NONMETALLIC ELEMENT ON STRUCTURE AND PROPERTIES OF CARBON NANOTUBES[J]. VACUUM AND CRYOGENICS, 2014, 20(4): 193-200. DOI: 10.3969/j.issn.1006-7086.2014.04.002
Citation: SHAO Xi-ji, DONG Chang-kun, LI De-tian, et al. STUDY ON THE EFFECT OF NONMETALLIC ELEMENT ON STRUCTURE AND PROPERTIES OF CARBON NANOTUBES[J]. VACUUM AND CRYOGENICS, 2014, 20(4): 193-200. DOI: 10.3969/j.issn.1006-7086.2014.04.002

碳纳米管非金属掺杂对结构和性能影响的研究

STUDY ON THE EFFECT OF NONMETALLIC ELEMENT ON STRUCTURE AND PROPERTIES OF CARBON NANOTUBES

  • 摘要: 通过讨论氮、硼、硅、氟等非金属原子掺杂的碳纳米管,对场电子发射特性的影响。介绍了掺杂在场电子发射、能源电池、气体传感器等领域的研究和应用。掺杂可以增加碳纳米管的缺陷,改变其电子结构。掺杂可使碳纳米管转变为n型半导体或是金属性导体,将提高场发射性能。同时,掺杂亦可使碳纳米管向p型半导体转变,这将不利于场发射性能改善。当场发射性能随着掺杂浓度升高而提高时,存在最佳掺杂浓度值,一旦超出,则场发射性能逐渐下降。因此,研究碳纳米管非金属掺杂具有重要的应用价值。

     

    Abstract: The structural and electronic properties of carbon nanotubes(CNTs)doped with nonmetallic element N,B,Si or F are discussed.Research& development efforts on fields including field emission,energy cells and gas sensing are presented for the doped CNTs.The doping could increase the defects in CNTs and alter the electronic structures.The CNTs could be transferred to N-type semiconductor or metallic conductor from the doping,leading the improvement of the field emission.The doping could also transfer CNTs to P-type semiconductors,caused the degradation of field emission.There is an optimized value of doping content with the improvement of field emission.The studies of the nonmetallic doping in CNTs are very important for various practical applications.

     

/

返回文章
返回