基底处理抑制成核生长大晶畴石墨烯的研究

SYNTHESIS OF LARGE DOMAIN GRAPHENE BY SUPPRESSING NUCLEATION THROUGH SUBSTRATE PROCESSING

摘要: 电抛光及退火有效降低了铜箔表面的杂质及缺陷，将石墨烯成核密度降至约50个/cm²，制备了毫米尺寸晶畴的石墨烯连续膜。石墨烯连续膜中大部分区域是单层的，但有约20%的双/多层区域。电性能的测量结果表明，通过增大石墨烯晶畴尺寸提高石墨烯连续膜的电性能是可行的。

Abstract: The defect and impurity on the surface of the copper foils were effectively decreased by electric polishing and annealing.It leads to the graphene nucleation density as low as 50 per square centimeter.Large part of the graphene film is single layer，but about 20 percent is double or more layers.The measured result of the electronic capability shows the feasibility of improving the electronic capability of the graphene film by increasing the graphene domain size.