微波化学气相沉积制备AlO<sub>x</sub>薄膜及钝化晶硅性能的研究

微波化学气相沉积制备AlO_x薄膜及钝化晶硅性能的研究

摘要: 通过线性微波化学气相沉积（LMW-PECVD）技术在P型单晶样品上高生长速度下制备了高质量的AlO_x薄膜，采用场发射电子扫描显微镜、光学椭圆偏振仪器、有效少子寿命测量仪对实验样品进行了表征和分析。结果表明，AlO_x薄膜的厚度和折射率都对晶硅的钝化效果有影响，薄膜厚度在20～30 nm之间、折射率在1.6～1.65之间出现了理想的钝化效果；热处理对AlO_x薄膜钝化效果的影响较为复杂，理想的热处理温度在350～400℃之间。

Abstract: AlO_xthin film have been synthesized on p-Si substrates via linear micro wave plasma enhanced chemical vapor deposited system.The obtained samples were characterized by SEM、Elliptical polarization instrument and Lifetime measuring device.The experimental results show that thickness and refractivity of AlO_xthin film has influenced on passivation property in p-Si.The thickness from 20 nm to 25 nm and refractivity from 1.6 to 1.65 of AlOx thin film has perfect passivation property.The impact of Annealing on AlO_xthin film was complex，but the best annealing temperature has arised from 350℃ to 400℃.