碳氧比对金刚石薄膜生长的影响

EFFECT OF CARBON OXYGEN RATIO ON THE GROWTH OF DIAMOND FILMS

摘要: 采用微波等离子体化学气相沉积法，以H₂/CH₄/CO₂为混合气源，通过改变气源碳氧比，探讨了碳氧比对金刚石薄膜生长的影响。利用扫描电子显微镜（SEM）、X射线衍射（XRD）和Raman光谱表征金刚石薄膜的表面形貌、晶粒取向和结晶质量。结果表明，随着C/O比的降低，金刚石膜表面形貌由原来的（100）面为主转向（111）面为主的金字塔形，薄膜质量有所提高，内应力降低。

Abstract: Diamond films were deposited with H₂/CH₄/CO₂ gas mixtures as source using microwave plasma chemical vapor deposition method with different carbon/oxygen ratio, which is aimed at exploring the effect of carbon oxygen ratio on the growth of diamond. The surface morphology, grain orientation and crystallinity of diamond films were systematically characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. The results show that with the decrease of C/O ratio, diamond films surface morphology changed from the original(100) plane to pyramid-shaped with(111) plane, film quality improved and internal stress is reduced.