Abstract: Reactive plasma deposition system has the characteristics of low ion bombardment energy and low substrate temperature when the film is deposited. It can be applied to the deposition of transparent conductive materials， and this technology is conducive to high conversion efficiency of solar cells. In this paper， the reaction plasma deposition system was studied with the RPD equipment of model FLD08. Tungsten doped indium oxide（IWO）thin films were deposited， and good results were obtained.