Abstract: With less energy consumption, small volume and less weight, CMOS APS is already a major development direction of imaging for remote sensing satellites. During the satellites flying on orbit, electron devices are exposed in space radiation, and degraded by space charged particles. Along with the improvement of semiconductor technology, sensibility of single event effect is more obvious, and is a key factor of reliability. Based on equipment on simulation of single event effect with pulse laser, radiation damage of CMOS APS irradiated by heavy ions is discussed. And sensibility of CMOS APS's different functional unit for single event effect is also analysed, obtaining sensitive parameter of single event effect. The result could be used for the design of radiation hardening for CMOS APS image sensor.