Abstract:
The influence of total gas pressure(20~26kPa)and methane concentration(0.3%~1%)on diamond growth using mixture gas of H
2/Ar/CH
4 source by microwave plasma chemical vapor deposition(MPCVD)was investigated.For a fixed methane concentration,characterization by Raman spectroscopy,scanning electron microscopy and X-ray diffraction indicated Characterization of nano diamond quality,surface morphology,grain size.The results show that growth rate increase with pressure increasing,but quality of nano-diamond films first become better then become worse while the pressure increases.Then using higher pressure and litter methane concentration could gain highly quality nanocrystalline diamond films.