王呈祥, 李得天, 曹生珠, 等. 新型MEMS电容真空传感器的设计及其分析[J]. 真空与低温, 2018, 24(5): 315-320. DOI: 10.3969/j.issn.1006-7086.2018.05.005
引用本文: 王呈祥, 李得天, 曹生珠, 等. 新型MEMS电容真空传感器的设计及其分析[J]. 真空与低温, 2018, 24(5): 315-320. DOI: 10.3969/j.issn.1006-7086.2018.05.005
WANG Chengxiang, LI Detain, CAO Shengzhu, et al. Design and Analysis of a New Type MEMS Capacitance Vacuum Pressure Sensor[J]. VACUUM AND CRYOGENICS, 2018, 24(5): 315-320. DOI: 10.3969/j.issn.1006-7086.2018.05.005
Citation: WANG Chengxiang, LI Detain, CAO Shengzhu, et al. Design and Analysis of a New Type MEMS Capacitance Vacuum Pressure Sensor[J]. VACUUM AND CRYOGENICS, 2018, 24(5): 315-320. DOI: 10.3969/j.issn.1006-7086.2018.05.005

新型MEMS电容真空传感器的设计及其分析

Design and Analysis of a New Type MEMS Capacitance Vacuum Pressure Sensor

  • 摘要: 为了延伸MEMS电容式真空传感器测量范围、提高抗过载能力,设计了一种新型岛状结构下电极。利用有限元方法分析该结构与传统结构真空传感器的压力-挠度、压力-电容、压力-薄膜应力关系。研究发现,与传统结构相比,新型结构真空传感器的低压灵敏度更高、线性输出性能更好、抗过载能力更强,可为MEMS电容式真空传感器研制提供参考。

     

    Abstract: In order to stretch measurement range and enhance the anti-overload capacity of MEMS capacitive vacuum sensor,a new island-like bottom electrode has been designed.Using finite element analysis (FEA) method to compare the relationship between pressure and deflection,pressure and capacitance,pressure and maximum stress,respectively.This new-type electrode has superb sensitivity in low pressure,better linearity and stronger anti-overload than normal structure,which could donate some references for the following manufacture process of MEMS vacuum sensor.

     

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