Abstract: Al-N co-doped ZnO thin films were grown on glass substrate by high power reactive magnetron sputtering(HiPIMS).We focus on the effects of nitrogen flow rate on the structure,morphology,and electrical properties of Al-N codoped ZnO thin films.The results show that the nitrogen flow rate plays an important role on the n-p type transformation and electrical properties of the conductivity type of Al-N co-doped ZnO thin films.When N₂=8 mL/min,the co-doped film is n-type.As the nitrogen fluxes was increasing,the carrier concentration was increased,and the film switched from ntype to p-type and then to n-type.In addition,the transmittance of Al-N co-doped ZnO film was as high as 85%in the visible light region.As 20 mL/min N₂ was introduced,the Al-N co-doped ZnO film exhibits a good p-type conductivity with the resistivity of 4.51 Ω cm,a carrier concentration of 5.47×10¹⁷ cm^-3 and a Hall Mobility of 2.7 cm²/Vs.