微电子器件重离子推导质子单粒子效应截面不同计算方法比较研究

The Comparison of Different Calculating Method Based on Microelectronic Devices Heavy Ion to Proton Single Event Effect Cross Section

摘要: 基于0.25 μm CMOS工艺SRAM器件的重离子及中能质子单粒子效应实验结果，简要分析了常见的三种由重离子单粒子翻转截面数据推导质子单粒子翻转截面数据的方法，并与器件质子单粒子效应实验数据进行了比较，利用Space Radiation软件预估了不同方法得到的器件典型轨道质子在轨错误率。总结了不同计算方法的适用性和准确性。

Abstract: In view of the 0.25 μm CMOS process SRAM's heavy ion and proton single event effect(SEU)experiment data,three different common prediction method based on heavy ion to proton single event effect data are analyzed.Meanwhile,the prediction result is compared with the experiment.Also we calculated the on orbit SEU error rate of different data on the Space Radiation software.At last,the accuracy and the applicability of those different method were been concluded.