王倩, 夏虎峰, 董战胜, 等. 非超高本底真空条件下沉积低氧含量ZrB2薄膜[J]. 真空与低温, 2020, 26(2): 96-100. DOI: 10.3969/j.issn.1006-7086.2020.02.002
引用本文: 王倩, 夏虎峰, 董战胜, 等. 非超高本底真空条件下沉积低氧含量ZrB2薄膜[J]. 真空与低温, 2020, 26(2): 96-100. DOI: 10.3969/j.issn.1006-7086.2020.02.002
WANG Qian, XIA Hufeng, DONG Zhansheng, et al. Study on the Preparation of Low Oxygen-content ZrB2 Film by Magnetron Sputtering Method at Non-ultra-high Vacuum Condition[J]. VACUUM AND CRYOGENICS, 2020, 26(2): 96-100. DOI: 10.3969/j.issn.1006-7086.2020.02.002
Citation: WANG Qian, XIA Hufeng, DONG Zhansheng, et al. Study on the Preparation of Low Oxygen-content ZrB2 Film by Magnetron Sputtering Method at Non-ultra-high Vacuum Condition[J]. VACUUM AND CRYOGENICS, 2020, 26(2): 96-100. DOI: 10.3969/j.issn.1006-7086.2020.02.002

非超高本底真空条件下沉积低氧含量ZrB2薄膜

Study on the Preparation of Low Oxygen-content ZrB2 Film by Magnetron Sputtering Method at Non-ultra-high Vacuum Condition

  • 摘要: 磁控溅射制备易氧化质薄膜一般需要超高本底真空条件,而超高真空条件在大面积、大批量镀膜工程中存在成本过高或较难实现的问题。通过在磁控溅射镀膜室内部附加1套辅助Ti靶,利用从Ti靶溅射出的Ti原子对氧的亲合作用,消耗镀膜腔内残余气氛特别是氧的含量,以期能够达到近似超高本底真空条件下的镀膜效果。以磁控溅射制备ZrB2薄膜为研究对象,对比研究了辅助Ti靶开启与否对制成ZrB2薄膜成分与微观组织及性能的影响,发现在相同的工艺条件下,辅助Ti靶开启可使ZrB2薄膜中的O含量由辅助Ti靶不开启的24.77 at.%降低为2.94 at.%;组织结构与性能对比分析结果表明,Ti靶不开启制成的高O含量ZrB2薄膜呈非晶结构,电阻率为682μΩ·cm,而Ti靶开启制成的低O含量ZrB2薄膜为多晶结构,电阻率降低至348μΩ·cm。

     

    Abstract: The preparation of easily oxidizable films by magnetron sputtering generally requires ultra-high background vacuum conditions.However,ultra-high vacuum conditions have problems of high cost or difficult implementation in large-area,large-scale coating engineering practice.A set of auxiliary Ti targets are added inside the magnetron sputtering coating chamber,and the affinity of Ti atoms sputtered from the Ti target to oxygen is used to consume the residual atmosphere in the coating chamber,especially the oxygen content,so as to achieve a similar super high background vacuum coating effect.Taking ZrB2 thin film prepared by magnetron sputtering as the research object,the effects of auxiliary Titarget opening or not on the components,microstructure and properties of ZrB2 thin films were compared.It was found that under the same process conditions,the O content in ZrB2 film was reduced to 2.94 at.%from 24.77 at.%when the auxiliary Ti target was opened;Microstructure and performance results show that the ZrB2 film with high O content without the Ti target is amorphous and the resistivity is 682 μΩ·cm,while the ZrB2 film with low O content when the Ti target is turned on is polycrystalline,and the resistivity decreases to 348 μΩ·cm.

     

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