Abstract: Deposition of metal films by electron beam evaporation equipment is one of the most common processes in the field of microelectronics fabrication.However, when using ordinary tungsten crucible to evaporate copper films, the evaporation speed is very low.This is because the molten copper and tungsten crucibles are wetted, hence, when the power of the electron gun is increased, the surface free energy of liquid copper decreases with temperature increasing, and the melted copper will consume the energy of the electron beam to spread upward along the crucible wall.Therefore, we opti-mized the structure of the turgsten crulible wall to prevent the liquid copper from spreading upward and doing work when the electron beam power increased, and increased the deposition rate of the copper film from 2 Å/s to 20 Å/s.Meanwhile, the roughness, uniformity and stress of copper films prepared at different deposition rates were compared to verify the feasibility of the method.