Abstract: Magnetron sputtering have the advantages of high purity, high compactness, good uniformity, high bonding strength between film and substrate, and good repeatability of sputtering process. It has a wide application prospect in the field of microelectronics.In order to explore the relationship between the process parameters and the quality of the film, the argon-oxygen ratio, sputtering temperature, sputtering time, sputtering power and other parameters during the deposition of BaTiO₃ thin films were studied. The results show that the orientated(100) BaTiO₃ with good crystllization, smooth surface, flat interface and thickness of about 177 nm can be obtained by using the oriented SrTiO₃ as substrate, with argon-oxygen ratio of 3:1, the deposition temperature of 750℃, the deposition time of 90 min, and the sputtering power of 80 W. This research confirms that the quality and performance of the films can be improved by optimizing the process parameters, which lays a foundation for the preparation of piezoelectric films with excellent properties by magnetron sputtering technology.