高磁场强度的矩形平面磁控溅射靶的设计

详细信息

THE DESIGN ON RECTANGULAR PLANAR MAGNETRON-SPUTTERING TARGET WITH THE HIGH INTENSITY OF MAGNETIC FIELD

School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China

摘要: 研究利用高磁场强度实现低电压磁控溅射的可能性;通过理论分析、实际设计和实验,分析了限制矩形平面磁控溅射靶表面水平磁场强度B的上限的几个因素;设计出了B为0.09T的矩形平面磁控溅射靶。结果表明:B的增加显著降低了磁控溅射镀膜工艺的着火电压和维持放电电压,为实现低电压磁控溅射提供了另一种思路。
- 磁控溅射 ;
- 磁场强度 ;
- 设计
Abstract: The probability of low voltage magnetron sputtering achieved by high intensity of magnetic field has been studied. Several factors confining the upper limit of the intensity B of magnetic field parallel to target surface in rectangular planar magnetron sputtering target have been studied by theory analysis, practice design and experiment. The rectangular planar magnetron sputtering target with B of 0.09 T has been designed. The results showed that the increase of the B educed greatly the touching off and keeping discharge voltage during magnetron sputtering coating, which give other approach to low voltage magnetron sputtering.
- magnetron-sputtering /
- the intensity of magnetic field /
- design