Abstract: It is very important to reduce the costs by improving the utilization ratio of the target in the magnetron sputtering deposition process. The range of movement for electrons can be extended in the orthogonal electromagnetic filed. It can improve the probability of collision between electron and working gas （argon） molecule and plasma density. Then the sputtering rate greatly increases. The etching areas are mainly related to the distribution of the orthogonal electromagnetic filed near the target surface. Two kinds of models to optimize the distribution of the electromagnetic filed near the rectangular target are suggested. The areas of the etching on the target and the utilization ratio of the target are improved by analysis of the two methods.