反应磁控溅射沉积TixAlyNz热控薄膜研究

DEPOSITION OF Tix AlyNz THERMAL CONTROL THIN FILMS BY MAGNETRON REACTIVE SPUTTERING

  • 摘要: 采用反应磁控溅射技术,以Ti和Al为溅射靶材料,Ar和N2为溅射气体,在Al基底上沉积TixAlyNz热控薄膜。优化制备薄膜的最佳实验条件。对薄膜进行XRD、XPS分析及热光学测试,研究了TixAlyNz薄膜的结构特点及热光学特性。结果表明,采用独立Ti、Al靶的磁控反应溅射制备的TixAlyNz热控薄膜,通过控制薄膜厚度与组成,在忽略飞行器内部热作用的条件下其平衡温度为34℃。

     

    Abstract: TixAlyNz thermal control thin films were deposited on Al substrate by reactive mag netron sputtering tech-nique,with Ti and Al as targets.Ar and N2 were used as sputtering gases.The effect of each factor on the structure of TixAlyNz thin films was investigated to obtain the optimum conditions for deposition.X -ray diffraction(XRD),X -ray photoelectron spectroscopy(XPS)have been used for characterizing the deposited films.Thermal and optic al test was processed for the thin films,which validated the thermal control characterization forTixAlyNz thin films.The research show that TixAlyNz thermal control thin films can be deposited by reactive magnetron sputtering technique with independent Ti 、Al targets by controlling thickness and composition of films.Neglecting internal heat contribut ions,equilibrium temperature of 34℃was obtained.

     

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