Abstract: In this paper, W-doped vanadium oxide thin films were prepared by radio frequency/directcurrent double targets magnetron sputtering methods. XPS（X-ray photoelectron spectroscopy） was used toanalyze the deposited thin films. It is found that the phases of the W-doped vanadium oxide thin films arecomplex. The phases were characterized via the characteristic peaks, and the doping quantity Of tungstenelement is obtained by applying the area sensitivity factors. AFM （atomic force microscopy） shows the surfacetexture of the deposited thin films, which vary with the deposited condition.