氘束轰击石墨化学腐蚀的实验进展

THE STUDY DEVELOPMETN ON CHEMICAL EROSION OF GRAPHITEBOMBARDED BY DEUTERIUM ION BEAM

  • 摘要: 在SMF-800石墨第一壁化学腐蚀温度特性的实验研究基础上,进一步测试了G3石墨、SMF-800高纯石墨和硼化石墨,以及SiC镀层等在1.3μA/3keV氘束轰击下化学腐蚀的温度特性。从中优选出C2B10H12氦辉光放电法制取的SMF-800石墨硼化层,它具有最佳的抗化学腐蚀性能。其CD4产额较SMF-800高纯石墨降低一个量级以上,CD4产额峰值温度下移至650K附近。用小角度转动样品法,初步地观察了氘束轰击下石墨释放CD4的角分布特性,为托卡马克偏滤器实验中建立CD4辐射区的定位及其控制等可行性进行了探索。

     

    Abstract: On the study of the chemical sputtering temperature characteristic of SMF 800 graphite first wall,a further study was carried out with fresh SMF 800 graphite,G3 graphite,SiC and boronized graphite.The SMF 800 graphite boronized with carborane (C 2B 10 H 12 )-helium glow discharge in HL 1M TOKAMAK was optimized it possesses the best antichemical-erosion character,the releasing rate of CD4 was lower one order than that of SMF 800 graphite,and the releasing peak temperature shifted in the vicinity of 650 K.By rotating graphite sample with a small angle,a small angle profile of CD4 releasing from the graphite radiated with a deuterium beam of 1.3 μA/3 keV was observed.With a 45° incident deuterium ion beam,the released CD4 peak was positioned at 1° right side of the normal sample with a 5° divergence angle to the normal sample,the releasing rate of CD4 wad decreased 7% approximatly,being decreasing faster one order than the cosine law.

     

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