用AFM研究硅基上沉积铜膜生长过程
AFM INVESTIGATIONS OF GROWTH OF Cu THIN FILMS DEPOSITED ON SILICON WAFERS
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摘要: 室温下,利用磁控溅射在P型Si(111)衬底上沉积了铜(Cu)膜。用原子力显微镜(AFM)对不同沉积时间制备的Cu膜形貌进行了观测,研究了磁控溅射沉积Cu膜时膜在硅衬底上成核和生长方式。Cu膜在Si衬底生长时,Cu的临界核以Volmer-Weber模式生长。溅射时,核长大增高为岛状,岛与岛相互连接构成岛的通道,最后形成连续膜。随着沉积的进行,Cu膜表面粗糙度由于晶粒凝聚和合并而增大。当形成连续致密的、具有一定晶向的Cu膜时,粗糙度反而减小。Abstract: The Cu thin films were deposited on P-Si(111) substrates by magnetron sputtering at room temperature.The surface morphology,nucleation and growth of Cu thin films on silicon were studied by growing a series of samples with different predetermined deposited times,which was followed by observation with Atomic Force Microscope(AFM).Cu nuclei grew on silicon follow the Volmer-We ber mode when Cu films deposited by magnetron sputtering.In the process of deposition,nuclei grew into islands,then the islands connected to form channels,and finally formed continuous films.The roughness of Cu film surfaces increased due to the agglomeration and coalescence of Cu grains during deposition.The roughness decreased when then continuous and compact films with a degree of crystallinity were formed.